c opyright ruichips semiconductor co . , ltd re v . c C oct ., 2011 www. ruichips .com ru 4 0 l10 h p - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage - 4 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward curren t t c =25 c - 9 .5 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c - 3 8 a t c =25 c - 9 .5 i d continuous drain current t c = 7 0 c - 8 a t c =25 c 3.1 p d maximum power dissipation t c = 7 0 c 2.0 w r q j a thermal resistance - junction to ambient 4 0 c /w ? - 4 0 v/ - 9 .5 a, r ds ( on ) = 19 m w (type ) @ v gs = - 10v r ds ( on ) = 30 m w (type) @ v gs = - 4.5 v ? super high dense cell design ? reliable and rugged ? esd protected ? lead free and green available ? dc - dc c onverter . absolute maximum ratings sop - 8 p - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 2 www. ruichips .com ru 4 0 l10 h electrical characteristics ( t a =25 c unless otherwise noted) r u4 0 l10 h symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds = - 250 m a - 4 0 v v ds = - 4 0 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 1 - 1.8 - 2. 5 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 m a v gs = - 10 v, i ds = - 9 a 19 22 m w r ds ( on ) drain - source on - state resistance v gs = - 4.5 v, i ds = - 8 a 30 34 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . the value in any given application depends on the user's specific board design. pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = - 1 a, v gs =0v - 1 v t rr reverse recovery time 3 6 ns q rr reverse re covery charge i sd = - 9 a, dl sd /dt=100a/ m s 2 8 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.5 w c iss input capacitance 23 1 0 c oss output capacitance 25 0 c rss reverse transfer capacitance v gs =0v, v ds = - 20 v, frequency=1.0mhz 1 6 5 pf t d ( on ) turn - on delay time 1 3 t r turn - on rise time 20 t d ( off ) turn - off delay time 3 9 t f turn - off fall time v dd = - 20 v, r l = 30 w , i ds = - 9 a, v gen = - 10v, r g = 6 w 1 9 ns gate charge characteristics q g total gate charge 40 5 2 q gs gate - source charge 8 q gd gate - drain charge v ds = - 32 v, v gs = - 10 v, i ds = - 9 a 12 nc
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 3 www. ruichips .com ru 4 0 l10 h typical characteristics power dissipation drain current p tot - power ( w) - i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 4 www. ruichips .com ru 4 0 l10 h typical characteristics output characteristics drain - source on resistance - i d - drain current (a) r ds(on) - on resistance ( m ) - v ds - drain - source voltage (v) - i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage - v g s - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 5 www. ruichips .com ru 4 0 l10 h typical characteristics drain - source on resistance source - drain diode forward normalized on resistance - i s - source current (a) t j - junction tem perature (c) - v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) - v gs - gate - source voltage (v) - v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 6 www. ruichips .com ru 4 0 l10 h avalanche test circu it and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 7 www. ruichips .com ru 4 0 l10 h ordering and marking information ru 4 0 l10 package (available) h : sop - 8 oper ating temperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 8 www. ruichips .com ru 4 0 l10 h package information sop - 8 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.3 50 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.7 00 5.100 0.185 0.200
c opyright ruichips semiconductor co . , ltd rev . c C oc t ., 2011 9 www. ruichips .com ru 4 0 l10 h customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations con tacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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